MSC2X101 Series

1200V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Catalog

1200V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io) (per Diode)	Mounting Type	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Diode Count	Diode Configuration	Technology	Package / Case	Current - Reverse Leakage	Package Name	Voltage - Forward (Vf) (Max)
Microchip Technology MSC2X101SDA120J	175 °C	-55 °C	0 ns	1200 V	100 A	Chassis Mount	500 mA	No Recovery Time	500 mA 500 mA	2	Independent	SiC (Silicon Carbide) Schottky	miniBLOC SOT-227-4	400 µA	SOT-227 (ISOTOP®)	1.8 V

Catalog

1200V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Description

MSC2X101SDA120 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.