FDS9933A Series

Dual P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -3.8A, 75mΩ

Catalog

Dual P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -3.8A, 75mΩ

Part	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id)	Package Name	Power - Max	Operating Temperature (Min)	Operating Temperature (Max)	Technology	FET Feature	Rds On (Max)	Mounting Type	Package Length	Package Width	Channel Count	Configuration	Configuration - Features	Vgs(th) (Max)
ON Semiconductor FDS9933A	20 V	10 nC	600 pF	3.8 A	8-SOIC	900 mW	-55 °C	150 °C	MOSFET (Metal Oxide)	Logic Level Gate	75 mOhm	Surface Mount	0.154 in	3.9 mm	2	P-Channel	Dual	1.5 V

Catalog

Dual P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -3.8A, 75mΩ

Key Features

-3.8A, -20VRDS(on)= 0.075Ω @ VGS= -4.5VRDS(on)= 0.105Ω @ VGS= -2.5V

• Low gate charge ( 7nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(on)

• High power and current handling capability

Description

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.