IC FLASH 2MBIT SPI/DUAL 8USON
Part | Memory Organization [custom] | Memory Organization [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Supplier Device Package | Clock Frequency | Technology | Access Time | Operating Temperature [Max] | Operating Temperature [Min] | Memory Size | Memory Interface | Package / Case | Memory Type | Memory Format | Package / Case [y] | Package / Case [x] |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited GD25LD20EKIGR | 256 K | 8 | 2 V | 1.65 V | Surface Mount | 6 ms | 100 µs | 8-USON (1.5x1.5) | 50 MHz | FLASH - NOR (SLC) | 12 ns | 85 °C | -40 °C | 2 Gbit | SPI - Dual I/O | 8-XFDFN Exposed Pad | Non-Volatile | FLASH | ||
GigaDevice Semiconductor (HK) Limited GD25LD20ETIGR | 256 K | 8 | 2 V | 1.65 V | Surface Mount | 6 ms | 100 µs | 8-SOP | 50 MHz | FLASH - NOR (SLC) | 12 ns | 85 °C | -40 °C | 2 Gbit | SPI - Dual I/O | 8-SOIC | Non-Volatile | FLASH | 3.9 mm | 0.154 in |
GigaDevice Semiconductor (HK) Limited GD25LD20EEIGR | 256 K | 8 | 2 V | 1.65 V | Surface Mount | 6 ms | 100 µs | 8-USON (3x2) | 50 MHz | FLASH - NOR (SLC) | 12 ns | 85 °C | -40 °C | 2 Gbit | SPI - Dual I/O | 8-XFDFN Exposed Pad | Non-Volatile | FLASH | ||
GigaDevice Semiconductor (HK) Limited GD25LD20CTIGR | 256 K | 8 | 2 V | 1.65 V | Surface Mount | 6 ms | 97 µs | 8-SOP | 50 MHz | FLASH - NOR | 85 °C | -40 °C | 2 Gbit | SPI - Dual I/O | 8-SOIC | Non-Volatile | FLASH | 3.9 mm | 0.154 in | |
GigaDevice Semiconductor (HK) Limited GD25LD20CKIGR | 256 K | 8 | 2 V | 1.65 V | Surface Mount | 6 ms | 97 µs | 8-USON (1.5x1.5) | 50 MHz | FLASH - NOR (SLC) | 12 ns | 85 °C | -40 °C | 2 Gbit | SPI - Dual I/O | 8-XFDFN Exposed Pad | Non-Volatile | FLASH |