F1162 Series

Dual RF to IF Downconverting Mixer for LTE

Manufacturer: Renesas Electronics Corporation

Catalog

Dual RF to IF Downconverting Mixer for LTE

Part	Secondary Attributes	Frequency (Max)	Frequency (Min)	Mounting Type	Package / Case	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Number of Mixers	Package Length	Package Name	Package Width	Current - Supply	RF Type	Gain	Noise Figure
Renesas Electronics Corporation F1162NBGI8	Down Converter	2.7 GHz	2.3 GHz	Surface Mount	36-WFQFN Exposed Pad	5.25 V	4.75 V	2	6 mm	36-VFQFPN	6 mm	330 mA	General Purpose	8.9 dB	9.9 dB
Renesas Electronics Corporation F1162NBGI	Down Converter	2.7 GHz	2.3 GHz	Surface Mount	36-WFQFN Exposed Pad	5.25 V	4.75 V	2	6 mm	36-VFQFPN	6 mm	330 mA	General Purpose	8.9 dB	9.9 dB

Catalog

Dual RF to IF Downconverting Mixer for LTE

Description

The IDT F1162 dual channel device is designed to operate with a single 5V supply. It is optimized for operation in a Multi-carrier BaseStation Receiver for LTE and TDD RF bands from 2300 - 2700 MHz with either Side Injection. IF frequencies from 50 to 500 MHz are supported. Nominally, the device offers +43 dBm Output IP3 with 335 mA of ICC. Alternately one can adjust 4 resistor values and a toggle pin to run the device in low current mode with +38 dBm Output IP3 and 230 mA of ICC.A member of IDT’s Zero-Distortion™ family, this RF to IF mixer reduces distortion for improved SNR while simultaneously reducing power consumption.