Beta
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IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 17 MOHM;
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Vgs (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 17 mOhm | 3 V | 9 A | 8-SO | N-Channel | 40 V | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | MOSFET (Metal Oxide) | 2000 pF | 2.5 W | 23 nC | -55 °C | 150 °C | Surface Mount |