MOSFET N-CH 75V 120A D2PAK
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 110 nC | Surface Mount | 75 V | N-Channel | 230 W | MOSFET (Metal Oxide) | 10 V | 20 V | 120 A | 5.8 mOhm | -55 °C | 175 ░C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | 4 V | 4750 pF | ||
Infineon Technologies | Surface Mount | 75 V | N-Channel | MOSFET (Metal Oxide) | 10 V | 20 V | 120 A | 6.3 mOhm | -55 °C | 175 ░C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | D2PAK | 4 V | 5150 pF | 180 nC | 200 W | ||
Infineon Technologies | 110 nC | Surface Mount | 75 V | N-Channel | 230 W | MOSFET (Metal Oxide) | 10 V | 20 V | 120 A | 5.8 mOhm | -55 °C | 175 ░C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | D2PAK | 4 V | 4750 pF |