MOSFET N-CH 30V 23A DIRECTFET
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Vgs (Max) | Technology | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | DIRECTFET™ MX | 38 nC | 2.1 W 75 W | 150 °C | -40 °C | 30 V | N-Channel | Surface Mount | 2.5 mOhm | DirectFET™ Isometric MX | 4110 pF | 4.5 V 10 V | 23 A 140 A | 2.35 V | 20 V | MOSFET (Metal Oxide) | Schottky Diode (Body) |