N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
| Part | Current - Continuous Drain (Id) (Tc) | Drain to Source Voltage (Vdss) | Package Name | FET Type | Power Dissipation (Max) | Vgs(th) (Max) | Vgs (Max) | Gate Charge (Max) | Rds On (Max) | Package / Case | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 120 A | 100 V | LFPAK56 Power-SO8 | N-Channel | 245 W | 4 V | 20 V | 111 nC | 4.3 mOhm | 4-LFPAK SOT-1023 | MOSFET (Metal Oxide) | 10 V | 7 V | Surface Mount | 7360 pF | -55 °C | 150 °C | |
 Nexperia USA Inc. | 70 A | 25 V | LFPAK33 | N-Channel | 69 W | 2.15 V | 20 V | 21.5 nC | 4.15 mOhm | 8-LFPAK33 (5-Lead) SOT-1210 | MOSFET (Metal Oxide) | 10 V | 4.5 V | Surface Mount | 1524 pF | -55 °C | 175 °C | |
 Nexperia USA Inc. | 130 A | 60 V | TO-220AB | N-Channel | 263 W | 4 V | 20 V | 103 nC | 3.9 mOhm | TO-220-3 | MOSFET (Metal Oxide) | Through Hole | 5600 pF | -55 °C | 175 °C | 10 V |