MOSFET N-CH 1000V 1.5A TO268
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 23 nC | 4.5 V | Surface Mount | 11 Ohm | 480 pF | TO-268AA | MOSFET (Metal Oxide) | 1000 V | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 10 V | -55 °C | 150 °C | 60 W | 1.5 A | 20 V | N-Channel |