GD25LT256 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH
| Part | Technology | Memory Format | Clock Frequency | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Memory Depth | Memory Width | Operating Temperature (Max) | Operating Temperature (Min) | Memory Interface (Type) | Memory Type | Access Time | Write Cycle Time - Page | Write Cycle Time - Word | Memory Size | Mounting Type | Package Width | Package Name | Package Length | Package / Case | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | ||||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 200 MHz | 1.65 V | 2 V | 32 M | 8 bit | 85 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 1.2 ms | 70 µs | 256 Mbit | Surface Mount | 8 | 8-WSON | 6 | 8-WDFN Exposed Pad | ||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 166 MHz | 1.65 V | 2 V | 32 M | 8 bit | 125 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 3 ms | 140 µs | 256 Mbit | Surface Mount | 8 mm | 24-TFBGA | 6 mm | 24-TBGA | Automotive | AEC-Q100 |
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 166 MHz | 1.65 V | 2 V | 32 M | 8 bit | 125 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 3 ms | 140 µs | 256 Mbit | Surface Mount | 7.5 mm | 16-SOIC 16-SOP | 0.295 in | Automotive | AEC-Q100 | |
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | ||||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 200 MHz | 1.65 V | 2 V | 32 M | 8 bit | 85 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 1.2 ms | 70 µs | 256 Mbit | Surface Mount | 7.5 mm | 16-SOIC 16-SOP | 0.295 in | |||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 200 MHz | 1.65 V | 2 V | 32 M | 8 bit | 105 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 2 ms | 140 µs | 256 Mbit | Surface Mount | 8 | 8-WSON | 6 | 8-WDFN Exposed Pad | ||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | 200 MHz | 1.65 V | 2 V | 32 M | 8 bit | 85 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 256 Mbit | Surface Mount | 8 mm | 24-TFBGA | 6 mm | 24-TBGA | |||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 200 MHz | 1.65 V | 2 V | 32 M | 8 bit | 105 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 2 ms | 140 µs | 256 Mbit | Surface Mount | 8 mm | 24-TFBGA | 6 mm | 24-TBGA | ||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 166 MHz | 1.65 V | 2 V | 32 M | 8 bit | 125 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 3 ms | 140 µs | 256 Mbit | Surface Mount | 8 | 8-WSON | 6 | 8-WDFN Exposed Pad |