MOSFET 2N-CH 40V 8A 8SOIC
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Configuration | Technology | FET Feature | Power - Max [Max] | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. AO4882 | -55 °C | 150 °C | 40 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Logic Level Gate | 2 W | Surface Mount | 19 mOhm | 415 pF | 8-SOIC | 8 A | 2.4 V | 12 nC | 8-SOIC | 3.9 mm | 0.154 in | ||
Alpha & Omega Semiconductor Inc. AO4884L_001 | -55 °C | 150 °C | 40 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Logic Level Gate | 2 W | Surface Mount | 1950 pF | 8-SOIC | 10 A | 2.7 V | 8-SOIC | 3.9 mm | 0.154 in | 33 nC | 13 mOhm | ||
Alpha & Omega Semiconductor Inc. AO4886 | -55 °C | 150 °C | 100 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Logic Level Gate | 2 W | Surface Mount | 942 pF | 8-SOIC | 3.3 A | 2.7 V | 20 nC | 8-SOIC | 3.9 mm | 0.154 in | 80 mOhm |