MOSFET 2N-CH 40V 8A 8SOIC
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Configuration | Technology | FET Feature | Power - Max [Max] | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc.  | -55 °C  | 150 °C  | 40 V  | 2 N-Channel (Dual)  | MOSFET (Metal Oxide)  | Logic Level Gate  | 2 W  | Surface Mount  | 19 mOhm  | 415 pF  | 8-SOIC  | 8 A  | 2.4 V  | 12 nC  | 8-SOIC  | 3.9 mm  | 0.154 in  | ||
Alpha & Omega Semiconductor Inc.  | -55 °C  | 150 °C  | 40 V  | 2 N-Channel (Dual)  | MOSFET (Metal Oxide)  | Logic Level Gate  | 2 W  | Surface Mount  | 1950 pF  | 8-SOIC  | 10 A  | 2.7 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | 33 nC  | 13 mOhm  | ||
Alpha & Omega Semiconductor Inc.  | -55 °C  | 150 °C  | 100 V  | 2 N-Channel (Dual)  | MOSFET (Metal Oxide)  | Logic Level Gate  | 2 W  | Surface Mount  | 942 pF  | 8-SOIC  | 3.3 A  | 2.7 V  | 20 nC  | 8-SOIC  | 3.9 mm  | 0.154 in  | 80 mOhm  |