IC GATE DRVR HALF-BRIDGE MODULE
| Part | Number of Drivers | Gate Type | Package / Case | Package / Case | Input Type | Driven Configuration | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Channel Type | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Power Integrations  | 2  | IGBT  N-Channel MOSFET  | 24 Leads  | 36-DIP Module  | Non-Inverting  | Half-Bridge  | 100 ns  | 80 ns  | Independent  | Module  | 16 V  | 14 V  | Through Hole  | 85 °C  | -40 °C  | 
Power Integrations  | 2  | IGBT  N-Channel MOSFET  | 24 Leads  | 36-DIP Module  | Inverting  | Half-Bridge  | 100 ns  | 80 ns  | Independent  | Module  | 16 V  | 14 V  | Through Hole  | 85 °C  | -40 °C  | 
Power Integrations  | 2  | IGBT  N-Channel MOSFET  | 24 Leads  | 36-DIP Module  | Half-Bridge  | 100 ns  | 80 ns  | Independent  | Module  | 16 V  | 14 V  | Through Hole  | 85 °C  | -40 °C  | |
Power Integrations  | 2  | IGBT  N-Channel MOSFET  | 24 Leads  | 36-DIP Module  | Inverting  | Half-Bridge  | 100 ns  | 80 ns  | Independent  | Module  | 16 V  | 14 V  | Through Hole  | 85 °C  | -40 °C  | 
Power Integrations  | 2  | IGBT  N-Channel MOSFET  | 24 Leads  | 36-DIP Module  | Inverting  | Half-Bridge  | 100 ns  | 80 ns  | Independent  | Module  | 16 V  | 14 V  | Through Hole  | 85 °C  | -40 °C  |