MOSFET N-CH 150V 51A D2PAK
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | FET Type | Technology | Package / Case | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Power Dissipation (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 89 nC | 30 V | 5 V | 2770 pF | 32 mOhm | N-Channel | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 V | 51 A | Surface Mount | 3.8 W 230 W | D2PAK | 10 V | -55 °C | 175 ░C |
Infineon Technologies | 89 nC | 30 V | 5 V | 2770 pF | 32 mOhm | N-Channel | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 V | 51 A | Surface Mount | 3.8 W 230 W | D2PAK | 10 V | -55 °C | 175 ░C |