GB100 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
IGBT MOD 1200V 200A INT-A-PAK
| Part | Current - Collector Cutoff (Max) | Configuration | Voltage - Collector Emitter Breakdown (Max) | Vce(on) (Max) | Input Capacitance (Cies) @ Vce | Current - Collector (Ic) (Max) | Operating Temperature | Package Name | Package / Case | Pin Count (Side 1) | Pin Count (Side 2) | Power - Max | Input | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Ic (Typ) | NTC Thermistor | IGBT Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5 mA | Single | 1200 V | 2.35 V 2.35 V | 8.58 nF | 200 A | 150 °C | Double INT-A-PAK | Double INT-A-PAK (3 + 4) | 3 | 4 pins | 833 W | Standard | Chassis Mount | |||||
Vishay General Semiconductor - Diodes Division | 5 mA | Half Bridge | 1200 V | 2.35 V 2.35 V | 8.58 nF | 200 A | 150 °C | Double INT-A-PAK | Double INT-A-PAK (3 + 4) | 3 | 4 pins | 833 W | Standard | Chassis Mount | |||||
Vishay General Semiconductor - Diodes Division | 1 mA | Single | 1200 V | 1.77 V | 8.96 nF | 200 A | Double INT-A-PAK | Double INT-A-PAK (3 + 4) | 3 | 4 pins | 833 W | Standard | Chassis Mount | -40 °C | 150 °C | 100 A | |||
Vishay General Semiconductor - Diodes Division | 80 µA | Full Bridge | 1200 V | 4 V | 127 A | ECONO3 4PACK | Module | 625 W | Standard | Chassis Mount | -55 °C | 150 °C | Yes | NPT |