IC SRAM 2MBIT PARALLEL 48TFBGA
Part | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Memory Size | Supplier Device Package | Access Time | Memory Interface | Technology | Mounting Type | Memory Type | Memory Format | Write Cycle Time - Word, Page | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc IS64WV12816DBLL-12BLA3 | -40 °C | 125 °C | 48-TFBGA | 2 Gbit | 48-TFBGA (6x8) | 12 ns | Parallel | SRAM - Asynchronous | Surface Mount | Volatile | SRAM | 12 ns | 2.4 V | 3.6 V | ||
ISSI, Integrated Silicon Solution Inc IS64WV12816EDBLL-10BLA3 | -40 °C | 125 °C | 48-TFBGA | 2 Gbit | 48-TFBGA (6x8) | 10 ns | Parallel | SRAM - Asynchronous | Surface Mount | Volatile | SRAM | 10 ns | 2.4 V | 3.6 V | ||
ISSI, Integrated Silicon Solution Inc IS64WV12816EDBLL-10CTLA3-TR | -40 °C | 125 °C | 44-TSOP | 2 Gbit | 44-TSOP II | 10 ns | Parallel | SRAM - Asynchronous | Surface Mount | Volatile | SRAM | 10 ns | 2.4 V | 3.6 V | 10.16 mm | 10.16 mm |
ISSI, Integrated Silicon Solution Inc IS64WV12816DBLL-12BLA3-TR | -40 °C | 125 °C | 48-TFBGA | 2 Gbit | 48-TFBGA (6x8) | 12 ns | Parallel | SRAM - Asynchronous | Surface Mount | Volatile | SRAM | 12 ns | 2.4 V | 3.6 V | ||
ISSI, Integrated Silicon Solution Inc IS64WV12816EDBLL-10CTLA3 | -40 °C | 125 °C | 44-TSOP | 2 Gbit | 44-TSOP II | 10 ns | Parallel | SRAM - Asynchronous | Surface Mount | Volatile | SRAM | 10 ns | 2.4 V | 3.6 V | 10.16 mm | 10.16 mm |
ISSI, Integrated Silicon Solution Inc IS64WV12816DBLL-12CTLA3-TR | -40 °C | 125 °C | 44-TSOP | 2 Gbit | 44-TSOP II | 12 ns | Parallel | SRAM - Asynchronous | Surface Mount | Volatile | SRAM | 12 ns | 2.4 V | 3.6 V | 10.16 mm | 10.16 mm |
ISSI, Integrated Silicon Solution Inc IS64WV12816EDBLL-10BLA3-TR | -40 °C | 125 °C | 48-TFBGA | 2 Gbit | 48-TFBGA (6x8) | 10 ns | Parallel | SRAM - Asynchronous | Surface Mount | Volatile | SRAM | 10 ns | 2.4 V | 3.6 V |