Beta
⌘K
OPTIMOS™ 5 N+N DUAL POWER MOSFET 25 V ; POWER BLOCK 5X6 PACKAGE; 0.9 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
| Part | FET Feature | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Configuration | Technology | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Power - Max [Max] | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4.5V Drive Logic Level Gate | -55 °C | 150 °C | 8.4 nC | 2 N-Channel (Dual) Asymmetrical | MOSFET (Metal Oxide) | 1100 pF | 8-PowerTDFN | 2 V | 3 mOhm | 2.5 W | Surface Mount | PG-TISON-8 | 25 V |