TJ200F04 Series

Catalog

MOSFET P-CH 40V 200A TO220SM

Part	Technology	Vgs(th) (Max) @ Id	Operating Temperature	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TJ200F04M3L,LXHQ	MOSFET (Metal Oxide)	3 V	175 °C	375 W	TO-220SM(W)	P-Channel	40 V	-20 V	10 V	200 A	460 nC	1280 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6 V 10 V	Surface Mount	1.8 mOhm