RQ3G110AT Series
Manufacturer: Rohm Semiconductor
Beta
⌘K
POWER MOSFET, P CHANNEL, 40 V, 35 A, 0.0098 OHM, HSMT, SURFACE MOUNT
| Part | Vgs(th) (Max) | Vgs (Max) | Power Dissipation (Max) | FET Type | Gate Charge (Max) | Operating Temperature | Package Length | Package Name | Package Width | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 2.5 V | 20 V | 2 W | P-Channel | 46 nC | 150 °C | 3.2 mm | 8-HSMT | 3 mm | MOSFET (Metal Oxide) | 10 V | 4.5 V | 35 A | 11 A | 12.4 mOhm | 2750 pF | 8-PowerVDFN | 40 V | Surface Mount |