Catalog
N-Channel MOSFET
Description
AI
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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N-Channel MOSFET
N-Channel MOSFET
| Part | FET Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Grade | Qualification | Configuration | Power - Max [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | N-Channel | 175 mOhm | 20 V | SC-59 SOT-23-3 TO-236-3 | 950 mV | 64.3 pF | 1.8 V 4.5 V | 8 V | SOT-23-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1.6 nC | 430 mW | Surface Mount | 1.24 A | ||||||
Diodes Inc | 195 mOhm | 20 V | 6-XFDFN Exposed Pad | 950 mV | 128.6 pF | X2-DFN1310-6 (Type B) | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 2.11 A | 3.2 nC | Automotive | AEC-Q101 | 2 N-Channel (Dual) | 1.39 W | ||||||
Diodes Inc | N-Channel | 200 mOhm | 20 V | 3-UDFN | 950 mV | 67.62 pF | 1.5 V 4.5 V | 8 V | X1-DFN1212-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 nC | Surface Mount | 1.21 A | 470 mW |