HIGH POWER, CURRENT HANDING CAPABILITY MOSFET
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Mounting Type | FET Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology CMS16N06D-HF | 50 mOhm | TO-252 (DPAK) | DPAK (2 Leads + Tab), SC-63, TO-252-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 14 nC | 2 W, 27 W | Surface Mount | N-Channel | 2.5 V | 4.5 V, 10 V | 815 pF | 60 V | 4.4 A, 16 A | 20 V | ||
Comchip Technology CMS16P06H8-HF | 48 mOhm | DFN5x6 | 8-PowerTDFN | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 W, 25 W | Surface Mount | P-Channel | 2.5 V | 4.5 V, 10 V | 1256 pF | 60 V | 5 A, 16 A | 20 V | PR-PAK | 22 nC |