Catalog
Nch 100V 170A, TO-263AB, Power MOSFET
Description
AI
RJ1P10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
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Nch 100V 170A, TO-263AB, Power MOSFET
Nch 100V 170A, TO-263AB, Power MOSFET
| Part | Operating Temperature | Package / Case | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Rds On (Max) | Mounting Type | Package Name | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Technology | Vgs (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 8600 pF | 189 W | 3 mOhm | Surface Mount | TO-263AB | 100 V | N-Channel | 105 A 105 A | 135 nC 135 nC | MOSFET (Metal Oxide) | 20 V | 6 V | 10 V | 4 V |