YQ1VWM10A Series

Trench MOS Structure, 100V, 1A, PMDEM, Highly Efficient SBD

Catalog

Trench MOS Structure, 100V, 1A, PMDEM, Highly Efficient SBD

Part	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Package / Case	Current - Reverse Leakage @ Vr	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Capacitance @ Vr, F
Rohm Semiconductor YQ1VWM10ATR	175 °C	100 V	1 A	Schottky	2-SMD, Flat Leads	6 µA	200 mA, 500 ns	Surface Mount	700 mV	PMDE	25 pF

Catalog

Trench MOS Structure, 100V, 1A, PMDEM, Highly Efficient SBD

Key Features

• High reliability, Small power mold type, Low VFand low IR, Low capacitance

Description

The YQ1VWM10A is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.