MBRT120 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 200V 60A 3TOWER
| Part | Package Name | Current - Average Rectified (Io) (per Diode) | Mounting Type | Package / Case | Voltage - Forward (Vf) (Max) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Current - Reverse Leakage | Diode Pair Count | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Technology | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Three Tower | 60 A | Chassis Mount | Three Tower | 920 mV | 500 ns | 200 mA | 1 mA | 1 pair | Common Anode | 200 V | Schottky | 150 °C | -55 °C |
GeneSiC Semiconductor | Three Tower | 60 A | Chassis Mount | Three Tower | 920 mV | 500 ns | 200 mA | 1 mA | 1 pair | Common Anode | 200 V | Schottky | 150 °C | -55 °C |
GeneSiC Semiconductor | Three Tower | 60 A | Chassis Mount | Three Tower | 750 mV | 500 ns | 200 mA | 1 mA | 1 pair | Common Cathode | 45 V | Schottky | 150 °C | -55 °C |
GeneSiC Semiconductor | Three Tower | 60 A | Chassis Mount | Three Tower | 880 mV | 500 ns | 200 mA | 1 mA | 1 pair | Common Cathode | 100 V | Schottky | 150 °C | -55 °C |
GeneSiC Semiconductor | Three Tower | 60 A | Chassis Mount | Three Tower | 880 mV | 500 ns | 200 mA | 1 mA | 1 pair | Common Anode | 80 V | Schottky | 150 °C | -55 °C |
GeneSiC Semiconductor | Three Tower | 60 A | Chassis Mount | Three Tower | 880 mV | 500 ns | 200 mA | 1 mA | 1 pair | Common Anode | 150 V | Schottky | 150 °C | -55 °C |
GeneSiC Semiconductor | Three Tower | 60 A | Chassis Mount | Three Tower | 750 mV | 500 ns | 200 mA | 1 mA | 1 pair | Common Cathode | 20 V | Schottky | 150 °C | -55 °C |
GeneSiC Semiconductor | Three Tower | 60 A | Chassis Mount | Three Tower | 750 mV | 500 ns | 200 mA | 1 mA | 1 pair | Common Anode | 35 V | Schottky | 150 °C | -55 °C |
GeneSiC Semiconductor | Three Tower | 60 A | Chassis Mount | Three Tower | 880 mV | 500 ns | 200 mA | 1 mA | 1 pair | Common Cathode | 100 V | Schottky | 150 °C | -55 °C |
GeneSiC Semiconductor | Three Tower | 60 A | Chassis Mount | Three Tower | 750 mV | 500 ns | 200 mA | 1 mA | 1 pair | Common Cathode | 45 V | Schottky | 150 °C | -55 °C |