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N-Channel Enhancement Mode Vertical DMOS FET
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N-Channel Enhancement Mode Vertical DMOS FET
N-Channel Enhancement Mode Vertical DMOS FET
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 500 mA | -55 °C | 150 °C | SOT-223-3 | 4 Ohm | Surface Mount | 75 pF | 10 V | MOSFET (Metal Oxide) | 20 V | 2.4 V | 2 W | 100 V | TO-261-4 TO-261AA | N-Channel | |
Diodes Inc | 320 mA | -55 °C | 150 °C | E-Line (TO-92 compatible) | 4 Ohm | Through Hole | 75 pF | 10 V | MOSFET (Metal Oxide) | 20 V | 2.4 V | 100 V | E-Line-3 | N-Channel | 700 mW |