1N8031 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE SIL CARBIDE 650V 1A TO276
| Part | Current - Reverse Leakage | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) | Package / Case | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Reverse Recovery Time (trr) | Mounting Type | Capacitance | Technology | Package Name | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 5 µA | 1.5 V | 1 A | 650 V | TO-276AA | 250 °C | -55 °C | 0 ns | Through Hole | 76 pF | SiC (Silicon Carbide) Schottky | TO-276 | |||
GeneSiC Semiconductor | 5 µA | 1.5 V | 1 A | 650 V | TO-276AA | 250 °C | -55 °C | 0 ns | Through Hole | 76 pF | SiC (Silicon Carbide) Schottky | TO-276 | 500 mA | No Recovery Time | 500 mA 500 mA |