DIODE MOD SIC SCHOT 650V SOT227
| Part | Diode Configuration | Supplier Device Package | Current - Average Rectified (Io) (per Diode) | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Speed | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Mounting Type | Current - Reverse Leakage @ Vr | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ GHXS050B065S-D3 | 2 Independent | SOT-227 | 95 A | 0 ns | 650 V | SOT-227-4, miniBLOC | No Recovery Time | 1.6 V | 175 ░C | -55 C | SiC (Silicon Carbide) Schottky | Chassis Mount | 125 µA | |
SemiQ GHXS050A170S-D3 | 2 Independent | SOT-227 | 150 A | 1700 V | SOT-227-4, miniBLOC | No Recovery Time | 1.9 V | 175 ░C | -55 C | SiC (Silicon Carbide) Schottky | Chassis Mount | 750 µA | ||
SemiQ GHXS050A060S-D3 | 2 Independent | SOT-227 | 50 A | 600 V | SOT-227-4, miniBLOC | 1.8 V | 175 ░C | -55 C | SiC (Silicon Carbide) Schottky | Chassis Mount | 100 µA | 200 mA, 500 ns |