PSMN011 Series

N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Catalog

N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Part	Gate Charge (Max)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Package / Case	Mounting Type	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Channel Count	Configuration	Configuration - Features	Current - Continuous Drain (Id) (Ta)	FET Feature	Power - Max (Ta)
Nexperia USA Inc. PSMN011-30YLC,115	10.3 nC	N-Channel	20 V	37 A	11.6 mOhm	SC-100 SOT-669	Surface Mount	1.95 V	10 V	4.5 V	MOSFET (Metal Oxide)	641 pF	30 V	29 W	LFPAK56 Power-SO8	-55 °C	175 °C
Nexperia USA Inc. PSMN011-60MSX	23 nC	N-Channel	20 V	61 A	11.3 mOhm	8-LFPAK33 (5-Lead) SOT-1210	Surface Mount	4 V			MOSFET (Metal Oxide)	1368 pF	60 V	91 W	LFPAK33	-55 °C	175 °C	10 V
Nexperia USA Inc. PSMN011-80YS,115	45 nC	N-Channel	20 V	67 A	11 mOhm	SC-100 SOT-669	Surface Mount	4 V			MOSFET (Metal Oxide)	2800 pF	80 V	117 W	LFPAK56 Power-SO8	-55 °C	175 °C	10 V
Nexperia USA Inc. PSMN011-60MLX	37.2 nC	N-Channel	20 V	61 A	11.3 mOhm	8-LFPAK33 (5-Lead) SOT-1210	Surface Mount	2.45 V	10 V	4.5 V	MOSFET (Metal Oxide)	2191 pF 2191 pF	60 V	91 W	LFPAK33	-55 °C	175 °C
Nexperia USA Inc. PSMN011-60HLX	24.5 nC				10.7 mOhm	8-LFPAK56 SOT-1205	Surface Mount	2.1 V			MOSFET (Metal Oxide)		60 V		LFPAK56D	-55 °C	175 °C		2	N-Channel	Dual	35 A	Logic Level Gate	68 W

Catalog

N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.