DXTN10060DFJBQ Series

NPN, 60V, 4A, DFN2020-3

Catalog

NPN, 60V, 4A, DFN2020-3

Part	Transistor Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Qualification	Mounting Type	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Diodes Inc DXTN10060DFJBQ-7	NPN	100 nA	3-UDFN Exposed Pad	60 V	AEC-Q101	Surface Mount	1.8 W	U-DFN2020-3 (Type B)	4 A	-55 °C	175 ░C	320 mV	125 MHz	Automotive	340

Catalog

NPN, 60V, 4A, DFN2020-3

Key Features

• BVCEO > 60V

• IC = 4A Continuous Collector Current

• Low Saturation Voltage (100mV Max @1A)

• RSAT = 60mΩ for a Low Equivalent On-Resistance

• hFE Specified up to 6A for High Current Gain Hold Up

• Tighter Gain Specification

• Low Profile 0.6mm High Package for Thin Applications

• RθJA Efficient, 60% Lower than SOT23

• 4mm2 Footprint, 50% Smaller than SOT23

• Rated +175°C – Ideal for High Temperature Environment

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DXTN10060DFJBQ is suitable for automotive applications requiring specific change control and is AEC-Q101qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.

Description

Advanced process capability has been used to maximise the performance of this 60V, NPN transistor. The U-DFN2020-3 (Type B) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance.