IC GATE DRVR HALF-BRIDGE 44PLCC
| Part | Channel Type | Supplier Device Package | Gate Type | Operating Temperature | Package / Case | Package / Case | High Side Voltage - Max (Bootstrap) [Max] | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Logic Voltage - VIL, VIH | Number of Drivers | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Driven Configuration | Input Type | Package / Case [x] | Package / Case [y] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3-Phase | 44-PLCC 32 Leads (16.58x16.58) | IGBT N-Channel MOSFET | 125 ¯C | 32 Leads | 44-LCC (J-Lead) | 1200 V | Surface Mount | 20 V | 10 VDC | 0.8 V 2 V | 6 | 500 mA | 250 mA | Half-Bridge | Inverting | |||
Infineon Technologies | 3-Phase | 28-SOIC | IGBT MOSFET N-Channel MOSFET | 125 ¯C | 28-SOIC | 1200 V | Surface Mount | 20 V | 10 VDC | 0.8 V 2 V | 6 | 500 mA | 250 mA | Half-Bridge | Inverting | 0.295 in | 7.5 mm | ||
Infineon Technologies | 3-Phase | 44-PLCC 32 Leads (16.58x16.58) | IGBT N-Channel MOSFET | 125 ¯C | 32 Leads | 44-LCC (J-Lead) | 1200 V | Surface Mount | 20 V | 10 VDC | 0.8 V 2 V | 6 | 500 mA | 250 mA | Half-Bridge | Inverting | |||
Infineon Technologies | 3-Phase | 28-SOIC | IGBT N-Channel MOSFET | 125 ¯C | 28-SOIC | 1200 V | Surface Mount | 20 V | 10 VDC | 0.8 V 2 V | 6 | 500 mA | 250 mA | Half-Bridge | Inverting | 0.295 in | 7.5 mm | ||
Infineon Technologies | 3-Phase | 28-SOIC | IGBT N-Channel MOSFET | 125 ¯C | 28-SOIC | 1200 V | Surface Mount | 20 V | 10 VDC | 0.8 V 2 V | 6 | 500 mA | 250 mA | Half-Bridge | Inverting | 0.295 in | 7.5 mm | ||
Infineon Technologies | 3-Phase | 44-PLCC 32 Leads (16.58x16.58) | IGBT N-Channel MOSFET | 125 ¯C | 32 Leads | 44-LCC (J-Lead) | 1.2 V | Surface Mount | 20 V | 10 VDC | 0.8 V 2 V | 6 | 500 mA | 250 mA | Half-Bridge | Inverting | |||
Infineon Technologies | 3-Phase | 28-PDIP | IGBT N-Channel MOSFET | 125 ¯C | 0.6 in | 28-DIP | 1200 V | Through Hole | 20 V | 10 VDC | 0.8 V 2 V | 6 | 500 mA | 250 mA | Half-Bridge | Inverting | 15.24 mm | ||
Infineon Technologies | 3-Phase | 44-PLCC 32 Leads (16.58x16.58) | IGBT N-Channel MOSFET | 125 ¯C | 32 Leads | 44-LCC (J-Lead) | 1200 V | Surface Mount | 20 V | 10 VDC | 0.8 V 2 V | 6 | 500 mA | 250 mA | Half-Bridge | Inverting | |||
Infineon Technologies | 3-Phase | 28-PDIP | IGBT N-Channel MOSFET | 125 ¯C | 0.6 in | 28-DIP | 1200 V | Through Hole | 20 V | 10 VDC | 0.8 V 2 V | 6 | 500 mA | 250 mA | Half-Bridge | Inverting | 15.24 mm |