N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology
N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology
N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology
| Part | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Vgs (Max) | Rds On (Max) | FET Type | Package Name | Gate Charge (Max) | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) (Tc) | Channel Count | Configuration | Configuration - Features | Power - Max (Ta) | Current - Continuous Drain (Id) (Ta) | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | -55 °C | 175 °C | 2.1 V | 4640 pF | 20 V | 14 mOhm | N-Channel | LFPAK56 Power-SO8 | 28.9 nC | MOSFET (Metal Oxide) | 10 V | 5 V | 147 W | 80 V | SC-100 SOT-669 | 62 A | ||||||
Nexperia USA Inc. | Surface Mount | -55 °C | 175 °C | 4 V | 1578 pF | 14 mOhm | LFPAK56D | 23.6 nC | MOSFET (Metal Oxide) | 60 V | 8-LFPAK56 SOT-1205 | 2 | N-Channel | Dual | 53 W | 30 A | |||||||
 Nexperia USA Inc. | Surface Mount | -55 °C | 175 °C | 2.2 V | 1160 pF | 13.6 mOhm | LFPAK56D | 19.4 nC | MOSFET (Metal Oxide) | 40 V | 8-LFPAK56 SOT-1205 | 2 | N-Channel | Dual | 46 W | 42 A | Logic Level Gate |