MOSFET N-CH 60V 30A TO252-3
| Part | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1100 pF | 100 W | 23 mOhm | 30 A | MOSFET (Metal Oxide) | -55 °C | 175 ░C | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 V | 10 V | 31 nC | N-Channel | 60 V | PG-TO252-3 | 20 V |