TPC6109 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET P-CH 30V 5A VS-6
| Part | Operating Temperature | Vgs(th) (Max) | Gate Charge (Max) | Mounting Type | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Current - Continuous Drain (Id) (Ta) | Package / Case | Technology | FET Type | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Name | Package Length | Package Width | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | 1.2 V | 12.3 nC | Surface Mount | 490 pF | 30 V | 700 mW | 5 A | SOT-23-6 Thin TSOT-23-6 | MOSFET (Metal Oxide) | P-Channel | 20 V | 10 V | 4.5 V | VS-6 | 2.9 mm | 2.8 mm | 59 mOhm |