DMTH6005LK3 Series

60V 175°C N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Qualification	Grade
Diodes Inc DMTH6005LK3-13	3 V	60 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252-3	4.5 V 10 V	5.6 mOhm	47.1 nC	90 A	2962 pF	MOSFET (Metal Oxide)	20 V	2.1 W 100 W	-55 °C	175 ░C	N-Channel
Diodes Inc DMTH6005LCT	3 V	60 V	Through Hole	TO-220-3	TO-220-3	4.5 V 10 V		47.1 nC	100 A	2962 pF	MOSFET (Metal Oxide)	20 V	2.8 W 125 W	-55 °C	175 ░C	N-Channel	6 mOhm	AEC-Q101	Automotive

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Low RDS(ON)– Minimizes Power Losses

• Low QG– Minimizes Switching Losses

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.