IXFN100 Series

DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini

Catalog

DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini

Part	FET Type	Mounting Type	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Vgs (Max)	Package / Case
LITTELFUSE IXFN100N10S1	N-Channel	Chassis Mount	180 nC	10 V	15 mOhm	4500 pF	-40 °C	150 °C	SOT-227B	100 A	360 W	MOSFET (Metal Oxide)	100 V	4 V	20 V	miniBLOC SOT-227-4
LITTELFUSE IXFN100N50Q3	N-Channel	Chassis Mount	255 nC	10 V	49 mOhm	13800 pF	-55 °C	150 °C	SOT-227B	82 A	960 W	MOSFET (Metal Oxide)	500 V	6.5 V	30 V	miniBLOC SOT-227-4
LITTELFUSE IXFN100N65X2	N-Channel	Chassis Mount	183 nC	10 V	30 mOhm	10800 pF	-55 °C	150 °C	SOT-227B	78 A	595 W	MOSFET (Metal Oxide)	650 V	5 V	30 V	miniBLOC SOT-227-4
LITTELFUSE IXFN100N20	N-Channel	Chassis Mount		10 V	23 mOhm	9000 pF	-55 °C	150 °C	SOT-227B	100 A	520 W	MOSFET (Metal Oxide)	200 V	4 V	20 V	miniBLOC SOT-227-4
LITTELFUSE IXFN100N50P	N-Channel	Chassis Mount	240 nC	10 V	49 mOhm	20000 pF	-55 °C	150 °C	SOT-227B	90 A	1040 W	MOSFET (Metal Oxide)	500 V	5 V	30 V	miniBLOC SOT-227-4
LITTELFUSE IXFN100N50P	N-Channel	Chassis Mount	240 nC	10 V	49 mOhm	20000 pF	-55 °C	150 °C	SOT-227B	90 A	1040 W	MOSFET (Metal Oxide)	500 V	5 V	30 V	miniBLOC SOT-227-4
LITTELFUSE IXFN100N25	N-Channel	Chassis Mount	300 nC	10 V	27 mOhm	9100 pF	-55 °C	150 °C	SOT-227B	100 A	600 W	MOSFET (Metal Oxide)	250 V	4 V	20 V	miniBLOC SOT-227-4
LITTELFUSE IXFN100N10S3	N-Channel	Chassis Mount	180 nC	10 V	15 mOhm	4500 pF	-40 °C	150 °C	SOT-227B	100 A	360 W	MOSFET (Metal Oxide)	100 V	4 V	20 V	miniBLOC SOT-227-4
LITTELFUSE IXFN100N65X2	N-Channel	Chassis Mount	183 nC	10 V	30 mOhm	10800 pF	-55 °C	150 °C	SOT-227B	78 A	595 W	MOSFET (Metal Oxide)	650 V	5 V	30 V	miniBLOC SOT-227-4
LITTELFUSE IXFN100N10S2	N-Channel	Chassis Mount	180 nC	10 V	15 mOhm	4500 pF	-40 °C	150 °C	SOT-227B	100 A	360 W	MOSFET (Metal Oxide)	100 V	4 V	20 V	miniBLOC SOT-227-4

Catalog

DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini

Description

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings