Beta
⌘K
MOSFET, N-CH, 600V, 20A, 150DEG C, 81W ROHS COMPLIANT: YES
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 650 V | 4 V | 160 mOhm | N-Channel | 20 V | 20 A | -55 °C | 150 °C | 31 nC | TO-220-3 | PG-TO220-3-1 | 81 W | 10 V | Through Hole | MOSFET (Metal Oxide) | 1317 pF | |
Infineon Technologies | 600 V | 4.5 V | 160 mOhm | N-Channel | 20 V | 23.8 A | -55 °C | 150 °C | TO-220-3 | PG-TO220-3 | 176 W | 10 V | Through Hole | MOSFET (Metal Oxide) | 2080 pF | 44 nC | |
Infineon Technologies | 600 V | 3.5 V | 160 mOhm | N-Channel | 20 V | 23.8 A | -55 °C | 150 °C | TO-220-3 | PG-TO220-3 | 176 W | 10 V | Through Hole | MOSFET (Metal Oxide) | 1660 pF | 75 nC |