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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Package / Case | Package Name | Vgs(th) (Max) | Mounting Type | Input Capacitance (Ciss) (Max) | Vgs (Max) | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) | FET Type | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Current - Continuous Drain (Id) (Ta) | Operating Temperature | Gate Charge (Max) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | TO-236AB | 1.25 V | Surface Mount | 1000 pF | 12 V | MOSFET (Metal Oxide) | 20 V | 55 mOhm | P-Channel | 2.5 V | 4.5 V | 3.5 A | 150 °C | 11 nC | 510 mW | ||||
Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | TO-236AB | 1.25 V | Surface Mount | 1000 pF | 12 V | MOSFET (Metal Oxide) | 20 V | 55 mOhm | P-Channel | 2.5 V | 4.5 V | 3.5 A | 11 nC | 510 mW | -55 °C | 150 °C | |||
Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | TO-236AB | 1.25 V | Surface Mount | 1000 pF | 12 V | MOSFET (Metal Oxide) | 20 V | 55 mOhm | P-Channel | 2.5 V | 4.5 V | 3.5 A | 150 °C | 11 nC | 4.15 W 510 mW | AEC-Q101 | Automotive | ||
 Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | TO-236AB | 1.25 V | Surface Mount | 1000 pF | 12 V | MOSFET (Metal Oxide) | 20 V | 55 mOhm | P-Channel | 2.5 V | 4.5 V | 3.5 A | 150 °C | 11 nC | 4.15 W 510 mW |