Catalog
650V, 12A, SMD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
Beta
⌘K
650V, 12A, SMD, Silicon-carbide (SiC) SBD
650V, 12A, SMD, Silicon-carbide (SiC) SBD
| Part | Technology | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Current - Average Rectified (Io) | Capacitance | Voltage - DC Reverse (Vr) (Max) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) | Package Name | Reverse Recovery Time (trr) | Current - Reverse Leakage | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | SiC (Silicon Carbide) Schottky | 500 mA | No Recovery Time | 500 mA 500 mA | 12 A | 440 pF | 650 V | 175 °C | 1.55 V | TO-263L | 0 ns | 240 µA | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount |