IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 7.5 MOHM;
| Part | Package / Case | Vgs (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | N-Channel | 42 A | 10 V | 95 nC | MOSFET (Metal Oxide) | Surface Mount | 2840 pF | -55 °C | 175 ░C | 55 V | TO-252AA (DPAK) | 7.5 mOhm | 140 W | 4 V |
Infineon Technologies | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | N-Channel | 42 A | 10 V | 95 nC | MOSFET (Metal Oxide) | Surface Mount | 2840 pF | -55 °C | 175 ░C | 55 V | TO-252AA (DPAK) | 7.5 mOhm | 140 W | 4 V |