DMTH10H003SPSW Series

100V 175°C N-Channel Enhancement Mode MOSFET

Catalog

100V 175°C N-Channel Enhancement Mode MOSFET

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Power Dissipation (Max) [Max]	Supplier Device Package	Grade	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Qualification	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Diodes Inc DMTH10H025SK3-13	N-Channel	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	4 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	2 W	TO-252 (DPAK)	Automotive	23 mOhm	1544 pF	46.3 A	AEC-Q101	100 V	6 V 10 V
Diodes Inc DMTH10H010SPS-13	N-Channel	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	4 V	Surface Mount	8-PowerTDFN		PowerDI5060-8	Automotive		4468 pF	11.8 A 123 A	AEC-Q101	100 V	6 V 10 V	8.8 mOhm	1.5 W	56.4 nC
Diodes Inc DMTH10H025LK3Q-13	N-Channel	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	3 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252 (DPAK)	Automotive	22 mOhm	1477 pF	51.7 A	AEC-Q101	100 V	4.5 V 10 V		3.1 W	21 nC
Diodes Inc DMTH10H030LK3-13	N-Channel	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	3.5 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252-3	Automotive	30 mOhm	1871 pF	28 A	AEC-Q101	100 V	6 V 10 V		2.1 W	33.3 nC
Diodes Inc DMTH10H015SPS-13	N-Channel	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	4 V	Surface Mount	8-PowerTDFN		PowerDI5060-8	Automotive		2343 pF	8.4 A 50.5 A	AEC-Q101	100 V	6 V 10 V	14.5 mOhm	1.5 W 55 W		30.1 nC
Diodes Inc DMTH10H003SPSW-13	N-Channel	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	4 V	Surface Mount	8-PowerTDFN		PowerDI5060-8 (Type Q)		3 mOhm	5542 pF	166 A		100 V	6 V 10 V		2.6 W		85 nC	167 W
Diodes Inc DMTH10H010LCT	N-Channel	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	3.5 V	Through Hole	TO-220-3		TO-220-3		9.5 mOhm	2592 pF	108 A		100 V	10 V		2.4 W 166 W		53.7 nC

Catalog

100V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures more reliable and robust end application

• Low RDS(ON)– Minimizes On-State Losses

• Fast Switching Speed

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen- and Antimony-Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotiveproducts/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC converters, and backlighting.