Catalog
Dual N-Channel Enhancement Mode MOSFET
Beta
⌘K
Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Technology | Power Dissipation (Max) | Package / Case [y] | Package / Case [x] | Qualification | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Grade | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | N-Channel | 10 A | 798 pF | 30 V | -55 °C | 150 °C | 4.5 V 10 V | Surface Mount | 17 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1.6 V | TO-252-3 | 8.7 nC | 25 V | MOSFET (Metal Oxide) | 1.71 W | |||||||
Diodes Inc | 7.5 A | 798 pF | 30 V | -55 °C | 150 °C | Surface Mount | 16 mOhm | 8-SOIC | 1.6 V | 8-SOP | MOSFET (Metal Oxide) | 3.9 mm | 0.154 in | AEC-Q101 | 8.56 nC | 1.17 W | Automotive | 2 N-Channel (Dual) |