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N-Channel MOSFET
| Part | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) [Max] | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | X2-DFN0806-3 | -55 °C | 150 °C | 8 V | N-Channel | 25 V | 280 mW | 0.36 nC | 4 Ohm | 3-XFDFN | 27.9 pF | 1.2 V | 240 mA | 4.5 V | 2.7 V | Surface Mount | MOSFET (Metal Oxide) |