IXYA15N65C3D1 Series

Disc IGBT XPT-GenX3 TO-263D2

Catalog

Disc IGBT XPT-GenX3 TO-263D2

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Test Condition Voltage (Secondary)	Test Condition Voltage	Test Condition Resistance	Test Condition Current	Package Name	Td (on) @ 25°C	Td (off) @ 25°C	Power - Max	IGBT Type	Mounting Type	Current - Collector Pulsed (Icm)	Package / Case	Input Type	Switching Energy (Off)	Switching Energy (On)	Reverse Recovery Time (trr)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge	Vce(on) (Max)
LITTELFUSE IXYA15N65C3D1	650 V	38 A	15 V	400 V	20 Ohm	15 A	TO-263AA	15 ns	68 ns	200 W	PT	Surface Mount	80 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	230 µJ	270 µJ	20 ns	-55 °C	175 °C	19 nC	2.5 V

Catalog

Disc IGBT XPT-GenX3 TO-263D2

Description

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements