IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 10 MOHM;
| Part | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 88 A | MOSFET (Metal Oxide) | 10 V | Surface Mount | 100 V | N-Channel | -55 °C | 175 ░C | 180 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 200 W | 5150 pF | 4 V |