IXBF9N160G Series

Disc IGBT BiMosfet-High Volt I4-PAK ISO+

Catalog

Disc IGBT BiMosfet-High Volt I4-PAK ISO+

Part	Package Name	Package Leads	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Gate Charge	Vce(on) (Max)	Power - Max	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Test Condition Resistance	Test Condition Voltage	Test Condition Voltage (Secondary)	Test Condition Current	Input Type
LITTELFUSE IXBF9N160G	i4-Pac™-5 ISOPLUS i4-PAC™	3 Leads	-55 °C	150 °C	Through Hole	34 nC	7 V	70 VA	1600 V	7 A	27 Ohm	960 V	10 V	5 A	Standard

Catalog

Disc IGBT BiMosfet-High Volt I4-PAK ISO+

Description

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.