30 V, dual N-channel Trench MOSFET
30 V, dual N-channel Trench MOSFET
| Part | Package / Case | Rds On (Max) | Package Name | Vgs(th) (Max) | Technology | Current - Continuous Drain (Id) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Channel Count | Configuration | Configuration - Features | Drain to Source Voltage (Vdss) | Mounting Type | Power - Max | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6-XFDFN Exposed Pad | 670 mOhm | DFN1010B-6 | 950 mV | MOSFET (Metal Oxide) | 590 mA | 30.3 pF | 1.05 nC | 2 | N-Channel | Dual | 30 V | Surface Mount | 285 mW | -55 °C | 150 °C |