DIODE GEN PURP 400V 16A TO220AB
| Part | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Package / Case | Reverse Recovery Time (trr) | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 200 mA 500 ns | 150 °C | -55 °C | TO-220AB | 16 A | 10 µA | 400 V | Standard | 60 pF | 1.3 V | Through Hole | TO-220-3 | 35 ns | ||||
Taiwan Semiconductor Corporation | 200 mA 500 ns | 150 °C | -55 °C | TO-220AB | 10 µA | 400 V | Standard | 1.3 V | Through Hole | TO-220-3 | 35 ns | 1 Pair Common Cathode | 16 A | Automotive | AEC-Q101 | ||
Taiwan Semiconductor Corporation | 200 mA 500 ns | 150 °C | -55 °C | TO-247AD (TO-3P) | 16 A | 10 µA | 400 V | Standard | 85 pF | 1.3 V | Through Hole | TO-247-3 | 35 ns |