MOSFET N-CH 55V 220A TO263-7
| Part | Rds On (Max) @ Id, Vgs | Vgs (Max) | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | FET Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 4 mOhm | 20 V | MOSFET (Metal Oxide) | 55 V | TO-263-7 (IXTA) | 220 A | -55 °C | 175 ░C | 158 nC | 7200 pF | 430 W | 4 V | N-Channel | D2PAK TO-263-7 | 10 V | Surface Mount | |
IXYS | 4.5 mOhm | 20 V | MOSFET (Metal Oxide) | 75 V | TO-263AA | 220 A | -55 °C | 175 ░C | 165 nC | 7700 pF | 4 V | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | Surface Mount | 480 W | |
IXYS | 4.5 mOhm | 20 V | MOSFET (Metal Oxide) | 75 V | TO-263-7 (IXTA) | 220 A | -55 °C | 175 ░C | 165 nC | 7700 pF | 4 V | N-Channel | D2PAK TO-263-7 | 10 V | Surface Mount | 480 W | |
IXYS | 4 mOhm | 20 V | MOSFET (Metal Oxide) | 55 V | TO-263AA | 220 A | -55 °C | 175 ░C | 158 nC | 7200 pF | 430 W | 4 V | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | Surface Mount |