
Catalog
N-channel vertical D-MOS logic level FET
N-channel vertical D-MOS logic level FET
| Part | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Rds On (Max) | Package Name | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Package / Case | Mounting Type | Vgs(th) (Max) | Vgs (Max) | Current - Continuous Drain (Id) (Ta) | Technology | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 3.9 nC | 4.5 V | 1.8 V | 200 mOhm | TO-236AB | 20 V | 152 pF | -55 °C | 150 °C | N-Channel | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 570 mV | 8 V | 1.05 A | MOSFET (Metal Oxide) | 417 mW |
Nexperia USA Inc. | 3.9 nC | 4.5 V | 1.8 V | 200 mOhm | TO-236AB | 20 V | 152 pF | -55 °C | 150 °C | N-Channel | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 570 mV | 8 V | 1.05 A | MOSFET (Metal Oxide) | 417 mW |