2N6306T1-Transistor Series

NPN Silicon Power 250V to 350V, 8A

Catalog

NPN Silicon Power 250V to 350V, 8A

Part	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max)	Power - Max	Operating Temperature (Max)	Operating Temperature (Min)	Package / Case	Mounting Type	Current - Collector (Ic) (Max)	Package Name	Vce Saturation (Max)	DC Current Gain (hFE) (Min)
Microchip Technology 2N6306T1	NPN	250 V	50 µA	125 W	200 °C	-65 °C	TO-204AA TO-3	Through Hole	8 A	TO-204AA (TO-3)	5 V	15

Catalog

NPN Silicon Power 250V to 350V, 8A

Description

This specification covers the performance requirements for NPN silicon, power 2N6306 and 2N6308 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/498.